Wide field weak lensing observations of A1835 and A2204

We present mass reconstructions from weak lensing for the galaxy clusters A1835 and A2204 over 34'x34' fields using data from the ESO/MPG Wide Field Imager. Using a background galaxy population of 22<R<25.5 we detect the gravitational shear of A1835 at 8.8 sigma significance, and obtain best-fit mass profiles of sigma_v=1233^{+66}_{-70} km/s for a singular isothermal sphere model and r_{200}=1550 h^{-1} kpc, c=2.96 for a `universal' CDM profile. Using a color-selected background galaxy population of 22<R<25.8 we detect the gravitational shear of A2204 at 7.2 sigma significance, and obtain best-fit mass profiles of sigma_v=1035^{+65}_{-71} km/s for a SIS model and r_{200}=1310 h^{-1} km/s, c=6.3 for a `universal' CDM profile. The gravitational shear at distances greater than 10' is significantly detected for both clusters. The best fit weak lensing cluster masses agree well with both X-ray and dynamical mass measurements, although the central concentration of A1835 is much lower in the weak lensing mass profile than that measured by recent Chandra results. We suggest that this lower concentration is most likely a combination of contamination of the 'background' galaxy population with cluster dwarf galaxies and the effect of a prolate or tri-axial cluster core with the major axis lying near the plane of the sky. We also detect a number of additional structures at moderate significance, some of which appear to be sub-haloes associated with the clusters.Comment: accepted to A&A, 14 pages, 13 figures, version with higher quality images can be found at http://www.uni-bonn.de/~clow

Electron-phonon interaction for adiabatic anharmonic phonons

A model with Holstein-like electron-phonon coupling is studied in the limit of adiabatic phonons. The phonon distribution is anharmonic with two degenerate maxima. This model can be related to fermions in a correlated binary alloy and describes microscopic phase separation. We discuss the weak and strong electron-phonon coupling limit and present a qualitative phase diagram. In terms of the phononic displacements it consists of a homogeneous, an alternating, and a disordered phase. There is a first order phase transition between the homogeneous and the alternating phase, and second order phase transition between the alternating and the disordered phase. The opening of a gap inside the disordered phase is treated by a dynamical mean-field theory.Comment: 11 pages, 3 figures, revised and published versio

Magnetic field induced 3D to 1D crossover in Sr0:9La0:1CuO2

The effect of the magnetic field on the critical behavior of Sr0:9La0:1CuO2 is explored in terms of reversible magnetization data. As the correlation length transverse to the magnetic field Hi,applied along the i-axis, cannot grow beyond the limiting magnetic length LHi, related to the average distance between vortex lines, one expects a magnetic field induced finite size effect. Invoking the scaling theory of critical phenomena we provide clear evidence for this effect. It implies that in type II superconductors there is a 3D to 1D crossover line Hpi(T). Consequently, below Tc and above Hpi(T) uperconductivity is confined to cylinders with diameter LHi(1D). Accordingly, there is no continuous phase transition in the (H,T)-plane along the Hc2-lines as predicted by the mean-field treatment.Comment: 4 pages, 5 figure

Constrained probability distributions of correlation functions

Context: Two-point correlation functions are used throughout cosmology as a measure for the statistics of random fields. When used in Bayesian parameter estimation, their likelihood function is usually replaced by a Gaussian approximation. However, this has been shown to be insufficient. Aims: For the case of Gaussian random fields, we search for an exact probability distribution of correlation functions, which could improve the accuracy of future data analyses. Methods: We use a fully analytic approach, first expanding the random field in its Fourier modes, and then calculating the characteristic function. Finally, we derive the probability distribution function using integration by residues. We use a numerical implementation of the full analytic formula to discuss the behaviour of this function. Results: We derive the univariate and bivariate probability distribution function of the correlation functions of a Gaussian random field, and outline how higher joint distributions could be calculated. We give the results in the form of mode expansions, but in one special case we also find a closed-form expression. We calculate the moments of the distribution and, in the univariate case, we discuss the Edgeworth expansion approximation. We also comment on the difficulties in a fast and exact numerical implementation of our results, and on possible future applications.Comment: 13 pages, 5 figures, updated to match version published in A&A (slightly expanded Sects. 5.3 and 6

HTS quasiparticle injection devices with large current gain at 77 K

Recent progress on the development of planar QP-injection devices using YBCO and STO as an epitaxial injection barrier will be discussed. The main problem for HTS injection devices is to grow reliably a well defined, ultra-thin tunneling barrier suitable for QP tunneling. For this purpose, we used inverted cylindrical magnetron sputtering to first optimize the smoothness of our YBCO films by controlling tightly an relevant sputtering conditions. We are able to prepare smooth (001) YBCO films on (001) STO substrates on a routine basis with an average roughness varying between 1 and 2 nm. With these flat YBCO films both planar as well as grain boundary junctions were fabricated using epitaxial STO barriers between 2 and 8 nm thick and a 50 nm of Au counter electrode. Planar junctions with 6 nm STO barriers were in most cases fully insulating, in some cases, a current gain of up to 7.4 at 77 K was obtained. For 3 nm STO barriers, the highest current gain was 15 at 81 K. The injection results also show a scaling behavior with junction size. Based on the present materials development and device understanding, we consider a current gain of up to 20 at 77 K possibl